PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
JANS2N3498L JANS2N3498 JANS2N3500L JANS2N3501L JAN |
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 NPN Transistor 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi, Corp. Honeywell International, Inc. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-LAWRENCE
|
2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
Panasonic, Corp. Matsshita / Panasonic Panasonic Semiconductor
|
BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39 MAX 3000A CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一c)| TO - 220AB现有 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一(c)| TO - 39封装 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
KSC1623LMTF KSC1623GMTFNL KSC1623O |
NPN Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Epitaxial Silicon Transistor 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR Low Frequency Amplifier & High Frequency OSC. 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.7 A, 80 V, NPN, Si, POWER TRANSISTOR 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 5 A, 20 V, PNP, Si, POWER TRANSISTOR 1 A, 32 V, NPN, Si, POWER TRANSISTOR 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
International Rectifier, Corp. Dielectric Laboratories, Inc.
|
PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体 60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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NXP Semiconductors N.V.
|
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